| 摘要 |
PURPOSE:To reduce arrangement pitches, and to improve the degree of integration of a semiconductor memory by bending and forming word lines so as to be separated from a connecting section. CONSTITUTION:Storage sections such as S33 and S34 are shaped symmetrically regarding a contact hole H31, and word lines (W1, W2 and W7, W8) are bent and formed so as to be separated from contact holes (H31, H32). Accordingly to such arrangement, the work liens can be disposed in minimum allowed line width. A void corresponding to one memory-cell section is shaped as shown at the left end of a data line D3, a semiconductor-substrate surface section A3 in the void is connected electrically to a diffusion layer 11 surrounding the periphery of a memory-array kept at constant potential, and a surface section A2 is connected to a diffusion layer I2 on the right side in the same manner, thus equalizing the capacitance of the whole data lines, then reducing the effect of the signal disturbance of the peripheral section of the array. |
