发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 PURPOSE:To improve the step coverage (stepped coatability) of a second layer wiring film, and to connect first and second layer wiring films excellently and electrically by flattening a recessed stepped section in the first layer wiring film inevitably formed in a through-hole region for electrically connecting the first layer wiring film and a semiconductor substrate by using a spin-cotable conductive resin layer. CONSTITUTION:A first insulating film 2 is formed onto the surface of a substrate 1, a first through-hole 10 is shaped in a predetermined region, a first layer wiring film is formed onto the first insulating film 2 and the first through- hole 10, and a conductive resin layer 6 is shaped onto the first layer wiring film 3 by employing a spin coating method. The conductive resin layer 6 is filled to a stepped section formed to the first wiring film 3, and flattens the stepped section. The conductive resin layer 6 is etched back, the conductive resin layer except the conductive resin layer filled to the stepped section in the first layer wiring film 3 is removed, and the first layer wiring film 3 is patterned to a prescribed shape. A layer insulating film 4 and a second layer wiring film 5 are shaped.
申请公布号 JPS62194646(A) 申请公布日期 1987.08.27
申请号 JP19860037790 申请日期 1986.02.20
申请人 MITSUBISHI ELECTRIC CORP 发明人 MORIYA JUNICHI;TANAKA EISUKE;IKEGAMI MASAAKI;ARIMA JUNICHI;TAMAKI REIJI;SAITO KENJI
分类号 H01L21/768;H01L23/522 主分类号 H01L21/768
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