| 摘要 |
PURPOSE:To improve a signal amplification factor by a method wherein a base layer is composed of an Nb or NbN layer provided on a collector layer composed of diamond structure Sn, GaSb, InSb, InAs, CdS, CdSe, PbTe and In1-xGaxAs mixed crystal or InSb1-yAsy mixed crystal. CONSTITUTION:An Nb layer is formed by CVD on a single crystal substrate 1 made of p-type GaSb, non-doped (n-type) InSb, p-type InAs, n-type CdS, n-type CdSe or n-type PbTe. Then a base pattern 2 composed of the Nb layer is formed from the Nb layer by reactive ion etching. Further, after an insulating layer 3 made of SiO2 is deposited over the whole surface of the substrate by vacuum evaporation, windows are formed in the insulating layer 3 on the base layer 2 and an emitter electrode 5 made of Nb is formed on the base layer 2 with a barrier layer 4 between by lifting-off and a base electrode 6 made of Nb is formed on the base layer 2 by lifting-off. Finally, a collector electrode 7 is formed in the window which is formed in the insulating layer 3 and exposes the substrate 1. With this constitution, a current transfer factor can be improved. |
