发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
摘要 PURPOSE:To prevent the generation of cracks in a passivation film and deformation of aluminum wiring, by forming, on the passivation film, a protection film for molding material. CONSTITUTION:After an oxide film 2, a phosphate glass 3 and an aluminum wiring 5a, 5b are formed on a substrate 1, a nitride film 4 as a passivation film is deposited by a plasma CVD method. An aluminum thin film 6 is formed on the nitride film 4 by sputtering. The pattern of a bonding pad portion is formed with a photo resist 9. The aluminum thin film 6 is eliminated by a wet etching, the nitride film 4 is eliminated by an anisotropic dry-etching, and the photo resist 9 is eliminated. Then, in the similar manner to a conventional process, wire bonding is performed in a wire bonding part, and mold packaging is performed.
申请公布号 JPS62194629(A) 申请公布日期 1987.08.27
申请号 JP19860037786 申请日期 1986.02.20
申请人 MITSUBISHI ELECTRIC CORP 发明人 OBATA MASANORI;MORIYA JUNICHI;SAITO KENJI;TAMAKI REIJI;ARIMA JUNICHI;MOCHIZUKI HIROSHI
分类号 H01L23/29;H01L21/314;H01L21/318;H01L23/31 主分类号 H01L23/29
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