发明名称 POSITIVE TYPE PHOTORESIST MATERIAL
摘要 PURPOSE:To obtain the titled material having a good sensitivity and excellent anti-heating and anti-dry etching properties by constituting the titled material from a copolymer composed of a compd. having sulfophenyl isopropene group and qinone diazide group bound to an aromatic ring as an essential component of the polymerizable monomer. CONSTITUTION:The titled material is constituted of the copolymer which includes, as a essential component, the compd. having sulfophenylisopropene group and quinone diazide group bound to the aromatic ring, for example, the polymerizable monomer having a molecular structure of sulfonic acid ester obtd. by reacting sulfonic acid group or its derivative group contd. in the compd. contg. quinone diazide group with a hydroxy group of isopropenyl phenol. The prescribed copolymer has preferably the weight average mol. wt. (MW) of 2000-100000. If the prescribed mol. wt. (MW) is <1000, the glass transition point (Tg) falls, and the heat-resistance is insufficient. If the prescribed MW is >500000, the sensitivity and the film forming property fall due to the reduction of solubility rate for the developer.
申请公布号 JPS62192737(A) 申请公布日期 1987.08.24
申请号 JP19860033900 申请日期 1986.02.20
申请人 MITSUI TOATSU CHEM INC 发明人 IZUKAWA TSUKURU;KATO NOBUKATSU;HANAUE KUNIO
分类号 C08F212/00;C08F212/14;G03C1/72;G03F7/022 主分类号 C08F212/00
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