| 摘要 |
PURPOSE:To enlarge an output amplitude, to improve the operation margin of a memory and to attain a sense operation at high speed by connecting between the drain and the source of a pull up transistor respectively, between a pair of output nodes and pull up power source nodes and connecting a gate and the drain mutually. CONSTITUTION:When an input signal is sense amplified, one of the output nodes N1, N2 (for instance, N2) is lower potential than VDD-¦VTHP¦, one transistor Q8 in which the low potential is applied to the gate of the p-channel transistors Q8, Q9 in the output potential pull up circuit 5, is turned on. Accordingly, the potential of the output node N1 of the other side to which the drain of the on state transistor Q8 largely goes to a high potential VOH' without being limited by the VDD-¦VTHP¦. This operation is similarly carried out when the high-low relation in the potential of the input signal is opposite, and the level difference (output amplitude) between the high potential VOH' and the low potential VOL of the output node of the other side is remarkably enlarged.
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