TREATING APPARATUS

摘要

PURPOSE:To utterly prevent pollution due to the back diffusion of oil vapor by using an oil-free vacuum pump as a vacuum pump which is used in a vacuum exhaust system of a reduced chemical vapor deposition device and subjecting its number of revolutions to feedback control of the degree of vacuum of a vacuum treating chamber. CONSTITUTION:A treating chamber 2 for semiconductor production is formed by a processed tube 1 made of quartz in a reduced chemical vapor deposition device and connected to a vacuum exhaust system 13 consisting of an oil-free vacuum pump 14 capable of controlling the number of revolutions by an invertor 16. This vacuum exhaust system 13 is provided with a controller 20 consisting of a computer or the like and it controls an invertor 16 and a heater 3 around the treating chamber 2 in basing on both the previously preset sequence and the measured data of the degree of vacuum in the inside of the treating chamber 2 due to a pressure measuring apparatus 19 and also controls the mass flow controllers 8a-10a and the valves 8b-10b of a gas feeding device 7 and thereby treatment forming a silicon film is performed on the wafers 31 set in the treating chamber 2 without causing an obstacle due to back diffusion such as oil vapor in the treating chamber 2.