发明名称 POSITIVE RESIST MATERIAL
摘要 PURPOSE:To obtain the titled material capable of preventing a negative inversion in a resister mark scanning part by incorporating a specific alkaline soluble resin and a specific compd. having a stopping power against solubility to the titled material. CONSTITUTION:The prescribed alkaline soluble resin is poly (hydroxy-alpha- methylstyrene) having 3,000-20,000 weight average mol.wt. If the weight average mol.wt. of the alkaline soluble resin is <3,000, the formability of the thin film is injured, and the resolution of the titled material is reduced. If the weight average mol.wt. of the alkaline soluble resin is >20,000, as the exposure value necessary to occur a gelation of the positive resist lessens, the negative inversion is easy to generate in case of detecting stage of the matching mark. The compd. having the stopping power against solubility is exemplified, for example, diazonaphthoqinone compd., etc., and is compounded 5-50wt% per the alkaline soluble resin. As the obtd. positive resist material does not occur the negative inversion in the resister mark scanning part, the peeling is easily effected with an org. solvent, and the treatment such as ashing due to oxygen is not necessary, thereby simplifying the pattern forming step.
申请公布号 JPS62191850(A) 申请公布日期 1987.08.22
申请号 JP19860033294 申请日期 1986.02.17
申请人 NEC CORP 发明人 TANIGAKI KATSUMI
分类号 G03F9/00;C09K9/00;G03C1/72;G03F7/039 主分类号 G03F9/00
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