| 摘要 |
PURPOSE:To control the temperature on the surface of semiconductor substrate without allowing remarkable reduction of temperature thereof when the raw material gas is supplied and realize the epitaxial growth with low temperature and a small amount of raw material gas by employing the structure that the semiconductor substrate is heated from the upper side of front surface and from the rear surface and the temperature of front surface is set higher than that at the rear surface. CONSTITUTION:In the case of realizing epitaxial growth of GaAs using trimethylgallium (TMG) and arsine (AsH3), the heat generating materials 7a, 7b of carbon are respectively inductively heated by RF coils 8a, 8b and set to 700 deg.C and 750 deg.C. In this case, the surface temperature of substrate, for example, the GaAs substrate 3 becomes 700 deg.C. Next, when H2 with flow rate of 20cc/min, AsH3 with flow rate of 300cc/min of TMG of the raw material gas are supplied, in the total flow rate of 7l/min of H2, to a reaction furnace 1 from a gas supply pipe 5, this material gas flows effectively into the corners between the heat generating materials. In this case, the GaAs substrate and periphery are heated not only from the rear surface but also from the front surface. Thereby, temperature drop at the GaAs substrate surface is kept within 5 deg.C and GaAs epitaxial layer having uniform crystal structure can be obtained.
|
