| 摘要 |
PURPOSE:To produce the titled high-quality single crystal with few crystal defects without causing twin formation and polycrystallization, by adding low- melting In in a state of a compound having its melting point closer to melting point to other raw material to the raw material. CONSTITUTION:In producing single crystal of In-containing GaAs compound semiconductor by setting a boat in a horizontal reaction tube and melting a raw material in a boat, In in a form of compound is added to the raw material. Since In has 156.4 deg.C melting point, GaAs has 1,238 deg.C melting point and they are extremely different, In is in contact with the quartz boat for a long time until GaAs polycrystal melts, there are problems of twin formation and polycrystallization in GaAs crystal growth. An In compound in the case of InAs has 943 deg.C melting point. Since InAs will not melt approximately up to a temperature wherein melt of GaAs is formed, the problems are eliminated and high-quality crystal with few defects can be produced. InGaAs, InP, etc., are similarly treated.
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