| 摘要 |
PURPOSE:To miniaturize an integrated circuit and to improve the quality by removing a resist film coated on the alignment mark of a wafer by laser emitting, and then aligning a mask on the wafer to not only improve the alignment accuracy but also to increase a margin in an etching step. CONSTITUTION:Only a resist film 3 on a mark used in a specific masking step is removed by laser emitting to expose the mark. For example, an argon gas laser or a carbon dioxide gas laser is emitted to the film 3 coated on the alignment mark 2 of a wafer 1. This process is more effective by emitting the laser on the resist film while spraying an oxygen as than in vacuum. The laser emission is executed only on the mark used in the masking step on the wafer. The laser may be emitted in addition to the use of an exclusive laser emitting unit by employing a laser light source and an oxygen gas introducing hole in an exposure unit.
|
