| 摘要 |
PURPOSE:To always give constant energy to resist even if it is set in any condition and improve size controllability of resist pattern by measuring reflectivity of reflection measuring mark having the same structure as the practical device and achieving exposure by changing amount of exposure to device depending on such measuring value. CONSTITUTION:The reflectivity measuring mark in the same structure as the practical device to be exposed is formed by alignment using the alignment mark and this reflectivity measuring mark 7 is moved to the region where the reflectivity measuring beam of reflectivity measuring means is applied. The beam is radiated, incident light intensity and reflected light intensity are measured respectively with measuring instruments 3, 4, reflectivity is calculated, this reflectivity is compared with that when amount of exposure is determined and such ratio is calculated into the existing amount of exposure. Amount of exposure is changed for every exposure processing so that energy stored in the resist 10 becomes constant. Thereby, size of resist pattern can always be kept constant and the wafer can be exposed with the wanted amount of exposure.
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