| 摘要 |
PURPOSE:To improve the yield of a coating method for a resist by dropping the resist on the surface of a wafer, then rotating the wafer at first rotating speed, then decelerating the speed, and then rotating the wafer at the second speed higher than the first speed to uniformly coat the entire surface of the wafer with the resist without irregularity. CONSTITUTION:A wafer is rotated at a first rotating speed N1 while dropping a predetermined quantity of a predetermined photoresist by a nozzle to approximately the center of the surface of a wafer after pretreating (cleaning) in a first step A, and the speed is gradually decelerated. The resist may not necessarily be dropped over the entire time, but be dropped before starting the rotation. Since the resist coated on the entire wafer is radially irregular and large in its thickness, the wafer is rotated at a second rotating speed N2 higher than the first speed N1 for a predetermined time. Thus, the thickness of the resist coating film is uniform in a necessary predetermined thickness over the entire surface of the wafer.
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