| 摘要 |
PURPOSE:To reduce the size and the cost of an optical integrated circuit by integrating a semiconductor laser and a photodiode formed on a cavity surface by a chemical etching method without using a cleaving method on the same semi-insulating substrate. CONSTITUTION:The N-type sides of a semiconductor laser and a photodiode are grounded, a positive voltage +V0 is applied to the P-type side electrode of the laser, and a negative voltage -V1 is applied to the P-type side electrode of the photodiode. The laser is oscillated by a current injected from the P-type side electrode of the laser, the light is emitted not only from the end of a front cavity, but also from the end of a rear cavity, and the light emitted from the end of the rear cavity is incident to the photodiode. Since a reverse bias -V1 is applied to the photodiode, a photocurrent flows proportionally to the light intensity. Accordingly, the intensity of the output light of the laser can be monitored by measuring the photocurrent.
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