| 摘要 |
PURPOSE:To improve the reliability of a semiconductor device by composing a wiring layer formed on a semiconductor element of 4 layers formed by sequentially laminating a titanium film, a tungsten film including titanium, an aluminum alloy film and a high melting point metal or its silicide film. CONSTITUTION:The entire surface of a wafer is covered sequentially with a Ti film 5, a TiW film 6, an Al alloy film 7 and a TiW film film 8, only necessary region then remains as wirings, and the other regions are removed selectively by etching. Thereafter, to form a preferable contact of a diffused layer 2 with wirings of 4-layer structure, it is sintered, and an insulating film 9 for electrically separating between the first wirings and the second wirings is then formed. Then, a contact hole 10 for connecting the first wirings with the second wirings is formed at a predetermined position of the film 9, and an aluminum alloy film 11 of second wirings is then formed. An only region necessary as wirings remains similarly to the case of the first wirings, the other regions are selectively removed by etching, and a protective film 12 is eventually formed to protect the wirings.
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