| 摘要 |
PURPOSE:To reduce a leakage current of a semiconductor device in the OFF characteristic of a MOS transistor by forming a channel stopping region around an Si film under a gate electrode. CONSTITUTION:An SiO2 film 2 is formed as an electrically insulating film on an Si substrate 1. A thin density P-type (P<->) Si film 3 is formed thereon, and boron is further implanted to the periphery of the film 3 with a resist mask to form a P<+> type channel stopping region 6. Then, a gate oxide film 4 and a gate electrode 5 are formed, and with the gate electrode as a mask N<+> type source, drain 7, 8 are formed in a self-alignment. In this case, since the density of the impurity in the source, drain 7, 8 is higher than that of the region 6, the region 6 is formed only under the electrode 5 in a self-aligning manner.
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