| 摘要 |
PURPOSE:To increase the withstanding voltage of a gate insulating film, and to improve reliability by forming a gate electrode, which is coated with an insulating film and both side surface thereof are shaped by curved surfaces, in an insulated gate type field-effect transistor. CONSTITUTION:A rectangular polycrystalline silicon thin-film, both side surfaces thereof have curved surfaces, is formed onto the surface of an insulating substrate 1. The polycrystalline silicon thin-film constitutes a gate electrode 3 for a thin-film transistor. A gate insulating film 5 is shaped so as to coat the gate electrode 3 in the upper section of the gate electrode, and a polysilicon semiconductor layer 7 is formed so as to coat the gate electrode 3 through the gate insulating film 5. Consequently, corner sections on both sides of the gate electrode 3 are shaped in the curved surfaces, thus distributing the electric line of force distributing in the gate insulating film 5 coating the gate electrode 3 approximately uniformly. Accordingly, field concentration to the gate insulating film 5 coating the corner sections on both sides of the gate electrode 3 formed to a curved-surface shape is relaxed. |
