| 摘要 |
PURPOSE:To improve the degree of integration, and to use an excellent single crystal silicon layer (an SOI layer) as an active layer in an upper layer while ensuring superior ohmic characteristics by forming structure in which a vertical wiring penetrates in the upper-layer active layer and is connected to a lower- layer active layer. CONSTITUTION:A vertical wiring 13 in vertical wiring structure in which a lower-layer active layer for a three-dimensional element, wherein at least two layers or more of active layers are laminated in the vertical direction, and an upper-layer active layer are connected penetrates the upper-layer active layer 14 and is connected to the lower-layer active layer 11. The upper and lower active layers are connected only by one via-hole, and the degree of integration can be improved at approximately twice as high as conventional structure. In the structure, a procedure in which the upper-layer active layer 14 is shaped through a beam annealing process and the vertical wiring 13 is formed is enabled, an excellent single crystal silicon layer can be shaped as the upper-layer active layer, and the upper and lower two-layer active layers can be connected by low contact resistance of specific contact resistivity of 10<-7>OMEGA.cm<2> or less.
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