| 摘要 |
PURPOSE:To decrease the etching rate of SiO to a CF4 group gas, and to prevent the reduction of the film thickness of an insulating film on Nb etching by evaporating either one of Cr, Zr, Al or the combination of these metals at the same time as SiO and containing an oxide in specific volume % into SiO. CONSTITUTION:Cr, Zr and Al, which are coupled with oxygen in an atmosphere and changed easily into oxides on evaporation and formed insulators therefrom are not etched by a CF4 group gas, are evaporated at the same time as SiO in order to increase the etching resistance of SiO against the CF4 group gas without damaging the feature of SiO. Consequently, Cr2O3, ZrO2 and Al2O3 in 5-10vol% are contained into SiO. Accordingly, an SiO film containing Cr2O3, ZrO2 and Al2O3 is used, thus increasing etching resistance against the CF4 group gas, then improving the yield of an Nb group superconducting circuit.
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