| 摘要 |
PURPOSE:A polymer, constituted of specific structural units, highly sensitive to electron rays, ion beams, near infrared rays, etc., having strong resistance to dry etching, capable of forming fine patterns and suitable for resist materials. CONSTITUTION:A silane based polymer having the backbone chain constituted of the formula (R is H or lower alkyl; n is 0 or a positive integer) and having 3,000-1,000,000mol.wt. The polymer is obtained by reacting a dichlorosilane compound with metallic sodium in a nonpolar solvent. An organic film and resist layer consisting of the above-mentioned silane polymer having a given resist pattern and 3,000-1,000,000mol.wt. are formed on a substrate one after another and a pattern is formed by a two-layer structural resist method using the resist pattern as a dry etching mask for the organic film. |
