| 摘要 |
PURPOSE:To use a synthetic resin substrate by bonding a semiconductor film of an amorphous Si on an insulating substrate at 200 deg.C or lower, and ion implanting the film to uniformize electric characteristics. CONSTITUTION:An amorphous Si film of Si-H2 bonding state is formed by a glow discharge or the like at 200 deg.C or lower on a synthetic resin substrate. In this case, the bond of the formed amorphous Si film is mostly Si-H2 so that its dark and photoconductivity do not arrive at practical use. Then, Si<+> is accelerated, for example, by 40 keV to the thin film to be implanted in 1.5X10<15> pieces/cm<2>, thereby altering the bonding state of Si-H2 to Si-H. Thus, a photoelectric element such as solar cell using synthetic resin for the substrate is obtained.
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