| 摘要 |
PURPOSE:To form a high-resistance element consisting of a polycrystal-line silicon film having high precision by boring a window to an insulating film and shaping a connecting electrode in which the conductive polycrystalline silicon film and a metallic film or a metallic silicide film are laminated to the window section. CONSTITUTION:A non-doped polycrystalline silicon film 13 is applied onto an SiO2 film 2 on an silicon substrate 1 through a CVD method, boron (B<+>) ions are implanted, and the doped polycrystalline silicon film 13 is patterned. The film 3 is coated similarly with an SiO2 film 14 through the CVD method, and the film 14 is thermally treated. Consequently, the polycrystalline silicon film having low concentration and high sheet resistance is shaped. Windows are bored to the SiO2 film 14, the windows are coated with non-doped polycrystalline silicon films 15, boron fluoride (BF<+>) ions are implanted to the films 15, and the doped polycrystalline silicon films 15 are patterned to an electrode shape. Films such as tungsten films 16 are grown selectively through the CVD method, and thermally treated.
|
