| 摘要 |
PURPOSE:To form source-drain electrodes in a plane, to prevent disconnections and to obtain an element having high reliability by burying a gate electrode, a gate insulating film, an active layer and an ohmic layer into a groove shaped to an insulator substrate. CONSTITUTION:A resist pattern 12 is formed onto a light-transmitting insulator substrate 11. A groove 13 is shaped to one part of the surface of the substrate 11, using the resist pattern 12 as a mask. An N<+> amorphous silicon layer 17, an amorphous silicon layer 16, an silicon nitride film 15 and a metallic layer 14 are applied or deposited so that total film thickness thereof coincides with the depth of the groove 13. The resist pattern 12 is removed by an organic solvent. Accordingly, multilayer structure up to the N<+> amorphous silicon layer 17 from the metallic layer 14 is left as a gate electrode 14a, a gate insulator 15a, an active layer 16a and an ohmic layer 17a only in the groove 13, and the surface of the ohmic layer 17a is shaped in the same plane as the surface of the peripheral substrate 11. |
