| 摘要 |
PURPOSE:To realize a very high efficiency oscillation and response with a frequency as high as over 10GHz by a method wherein current blocking layers on the flat parts on both sides of an active layer of a DC-BBH type semiconductor laser are replaced by insulating films of SiO2 or the like. CONSTITUTION:By reverse P-N junctions composed of P-type InP layers 15 and N-type InP current blocking layers 16 buried in two trenches and polyimide layer 22 and SiO2 layers 19, a current made to flow by a voltage applied between a P-type electrode 20 and an N-type electrode 21 is made to flow selectively to a P-type InGaAsP contact layer 18, a P-type InP cap layer 17, a P-type InP cladding layer 14, an active layer 11 and an N-type buffer layer 12. At that time, leakage currents are made to flow from the P-type InP layers 15 to P-type InP cladding layers 14 outside the trenches. However, as an NPN transistor is not formed in such part, the leakage current is not amplified. With this constitution, the leakage current is very low and a high efficiency oscillation can be realized. |
