| 摘要 |
PURPOSE:To obtain a liquid crystal device which has a more distinct critical electric field Ec according to the kind of the electric discharge accumulated in an electric charge capturing central layer TL by providing a dielectric material film having the central layer TL to the inside of one or both electrodes. CONSTITUTION:Transparent conductive films 3, 3' are formed of, for example, ITO on glass substrates 4, 4' and further the thin dielectric material film which does not have the 1st TL, for example, silicon nitride 1 is formed atop one film thereof. A dielectric material film having the TL and the 2nd dielectric film 6 contg. a silicon semiconductor in excess is formed on said film and thereafter, the entire part thereof is subjected to vacuum evacuation and the 3rd dielectric material film 2 which does not have the 2nd TL is thinly formed. The silicon nitride film which does not have the TL is similarly formed on the electrode 3' of the other transparent conductive film and an orientation- treated film 7 is formed atop the same by using an org. film. The ferroelectric liquid crystal is filled therebetween. The electrodes of such cell are sized 1mmX1mm and are constituted as matrix. Beautiful Ec is substantially provided to the liquid crystal device if + or -10V voltage is impressed to the respective electrodes.
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