| 摘要 |
PURPOSE:To improve the controllability of the thickness of a film by injecting a substance having a chemical structure of AHXYZ, AH2XY or AH3X, where A is Si or Ge, H is hydrogen, X, Y, Z are hydrocarbon or hydrocarbon halogenide to the surface of a substrate to form a film which contains an element A, thereby growing a film at each atom layer of the A. CONSTITUTION:When GeH2(CH3)2 gas 3 is injected at approx. 300 deg.C on a substrate, a Ge(CH3)2 layer of one atom layer is formed to stop forming of a film. When chlorine gas or hydrochloric acid gas is introduced after the remaining gas and the like is removed, a methyl group is substituted for a chlorine gas, a structure that the chlorine group or other halogen is exposed on the surface is formed. When the substrate is then heated or the substrate is heated and hydrogen is injected to remove chlorine, it is sufficient. The surface structure obtained at this item is that Ge is exposed, hydrogen group is bonded or mixed or unobvious. Then, when the remaining gas is removed GeH2(CH3)2 is again injected to the surface, the structure in Fig. f is obtained. Then, this operation is repeated.
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