| 摘要 |
PURPOSE:To improve a heat radiation efficiency by a method wherein 1st cladding layer, an active layer, 2nd cladding layer and two- or three-component mixed crystal current blocking layers are formed on a semiconductor substrate in this order and a double-layer structure composed of 3rd cladding layer and a cap layer which are formed upward from the inside of a trench in the current blocking layer by crystal growth is provided. CONSTITUTION:A laser beam emitting part is an active layer 1 above which current blocking layers 4 and 5 do not exist. As 3rd cladding layer 6 exists only on the inside and the upper part of a trench formed in the current blocking layers 4 and 5 and on the part very close to the trench, the radiation path of the heat generated in the laser beam emitting part and its neighborhood consists of 2nd cladding layer 3 and the current blocking layers 4 and 5 and does not include the 3rd cladding layer 6. As the current blocking layers 4 and 5 and a cap layer 7 which constitute the heat radiation path are made of two- or three-component mixed crystal and made of materials with small thermal resistivity, the heat radiation efficiency can be improved and, as the cap layer 7 is contacted with a heatsink by fusion, heat radiation to the sidewise direction can be also increased.
|
