发明名称 3-DIMENSIONAL TUNNEL MEMORY
摘要 PURPOSE:To facilitate wiring by so disposing wirings between first and second molecules as to communicate charge, and alternately applying an electric field along molecular tunnel hopping direction to shorten a transfer time. CONSTITUTION:Assume that charge is provided at the upper end of first molecule C1 in a region X and an electric field EC is applied, the charge is transferred longitudinally of the first molecule C1 (lower rightward). When an electric field ED is then applied, charge is transferred to the lower leftward of second molecule D1, and charge is transferred downward like C1, D1, C2, D2.... The general negative charge transferring direction is crossed with the angle of 45 deg. from the directions of the molecule and the electric field. Accordingly, an electrode 30 has a slope or 45 deg. to the perpendicular direction. The charge written by a light is sequentially fed along a molecular chain, injected to a P-type semiconductor, and emitted as a light. Here, the P-type semiconductor employs a direct gap type semiconductor (e.g., II-V Group semiconductor such as GaP, II-VI Group semiconductor of ZnS).
申请公布号 JPS62189746(A) 申请公布日期 1987.08.19
申请号 JP19860031667 申请日期 1986.02.15
申请人 OLYMPUS OPTICAL CO LTD 发明人 MORIMOTO MASAMICHI;OKADA TAKAO
分类号 H01L27/10;G11C11/14;H01L51/05 主分类号 H01L27/10
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