| 摘要 |
PURPOSE:To obtain a flow of uniform material gas on the surface of a substrate by providing a gas flow preventing jig having an upper surface having the same plane as a substrate placing surface extending to the inner wall of a reaction tube so that the gas flowing on the substrate placing surface does not flow to the side of the substrate placing base. CONSTITUTION:A gas flow preventing jig having an upper surface 5 having the same plane as a substrate placing surface 4 extending to the inner wall of a reaction tube 1 at least at both sides of a substrate placing base 3 is provided. Since the surface 4 and the upper surface 5 of the jig 6 are disposed in the same plane, material gas flowing on the surfaces flows backward of the tube 2 along the gas flow and cannot flow to the side of the base 3. Accordingly, the gas flowing on the surface of a substrate 2 uniformly flows, and the growing velocity, composition and quality of an InP grown layer become uniform. Since the gas does not flow from the surface of the substrate 2 to the side of the base 3, the effect of contributing to the crystal growth of the gas is increased as compared with the conventional one.
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