MOS SEMICONDUCTOR DEVICE HAVING A FET AND A METAL WIRING LAYER

摘要

An opening is formed at a position substantially midway along the widthwise direction of a wide metal wiring layer formed on a semiconductor substrate. A second metal wiring layer is formed in the opening in the same step for forming the wide first metal wiring layer. Drain electrodes of a CMOS inverter formed below the wide first metal wiring layer are connected to the second metal wiring layer through contact holes. The second metal wiring layer is connected to a polycrystalline silicon layer as an output wiring layer through a contact hole.