发明名称 Method of fabrication of low crosstalk photodiode array
摘要 A photodiode array structure and method of fabrication is provided. The array is fabricated on a substrate as a multilayer structure with a novel combination of different type layers and then separated into optically independent diodes by delineation of the diodes. A novel array with heterojunction diodes for far-infrared is specifically disclosed.
申请公布号 US4686761(A) 申请公布日期 1987.08.18
申请号 US19860925585 申请日期 1986.10.31
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY 发明人 HACSKAYLO, MICHAEL
分类号 H01L27/146;(IPC1-7):H01L31/18 主分类号 H01L27/146
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