| 发明名称 |
Solar cells based on CuInS2 |
| 摘要 |
Solar cells with photoanodes based on CuInS2 semiconductor material produced by specially adapted methods, permit the transformation of light into electric energy with a good efficiency. The semiconductor material according to the invention comprises inclusions of extraneous phases, namely In2S3, In and/or Cu2-xS (0</=x</=1) in a concentration between 5 per thousand and 5 percent, in the CuInS2. The energy gap of this material is 1.5 eV. Working electrodes for photoelectrochemical solar cells or solid state solar cells can be constructed.
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| 申请公布号 |
US4687881(A) |
申请公布日期 |
1987.08.18 |
| 申请号 |
US19860861516 |
申请日期 |
1986.05.09 |
| 申请人 |
HAHN-MEITNER-INSTITUT BERLIN GMBH |
发明人 |
GOSLOWSKY, HANS;LEWERENZ, HANS-JOACHIM;FIECHTER, MANUEL S.;HUSEMANN, KARL-DIETER |
| 分类号 |
H01G9/20;H01L;H01L31/032;H01L31/18;H01M14/00;(IPC1-7):H01L31/06;H01M6/36 |
主分类号 |
H01G9/20 |
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