| 摘要 |
A method is disclosed for growing thermally unstable ferroelectric materials having the formula MH2XO4, where M is potassium, rubidium, cesium or ammonium; H is hydrogen or deuterium and X is phosphorus or arsenic. The ferroelectric material is heated to melt temperature in a constant volume cylindrical chamber (10) which is moisture-free. Improved crystal formation is accomplished by axially cooling the melt from the bottom end (18) of the chamber by thermal conduction along the chamber longitudinal axis predominantly and only minimally by radial thermal conduction through the sides (16) of the chamber. The axial cooling produces a crystal interface which is flat and perpendicular to the chamber axis and which gradually progresses toward the chamber top to provide uniform growth of a single crystal of ferroelectric material.
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