发明名称 OPPOSED TARGET TYPE SPUTTERING DEVICE
摘要 PURPOSE:To form a thin film having increased vertical magnetic anisotropic energy by providing the 2nd magnetic field generating means near the surface of a substrate and generating the magnetic field perpendicular to the substrate. CONSTITUTION:The vertical magnetic field H1 is generated between opposed targets 2 and 3 of a sputtering device 1 by the magnetic field generating means. The substrate 4 is disposed alongside the spacing between the targets 2 and 3. The 2nd magnetic field generating means 5 is fixedly disposed to the rear of the substrate 4 to generate the magnetic field H2 perpendicular to the surface of the substrate 4. A permanent magnet, etc., are used for the 2nd magnetic field generating means 5. The magnetic field on the surface of the substrate 4 is controlled by such device, by which the thin film having the large vertical magnetic anisotropic energy is formed.
申请公布号 JPS62188775(A) 申请公布日期 1987.08.18
申请号 JP19860006086 申请日期 1986.01.14
申请人 SUMITOMO ELECTRIC IND LTD 发明人 TAKANO SATORU;MATSUMOTO YASUYO;NAOE MASAHIKO
分类号 C23C14/34;G11B5/85;G11B5/851 主分类号 C23C14/34
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