发明名称 |
OPPOSED TARGET TYPE SPUTTERING DEVICE |
摘要 |
PURPOSE:To form a thin film having increased vertical magnetic anisotropic energy by providing the 2nd magnetic field generating means near the surface of a substrate and generating the magnetic field perpendicular to the substrate. CONSTITUTION:The vertical magnetic field H1 is generated between opposed targets 2 and 3 of a sputtering device 1 by the magnetic field generating means. The substrate 4 is disposed alongside the spacing between the targets 2 and 3. The 2nd magnetic field generating means 5 is fixedly disposed to the rear of the substrate 4 to generate the magnetic field H2 perpendicular to the surface of the substrate 4. A permanent magnet, etc., are used for the 2nd magnetic field generating means 5. The magnetic field on the surface of the substrate 4 is controlled by such device, by which the thin film having the large vertical magnetic anisotropic energy is formed.
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申请公布号 |
JPS62188775(A) |
申请公布日期 |
1987.08.18 |
申请号 |
JP19860006086 |
申请日期 |
1986.01.14 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
TAKANO SATORU;MATSUMOTO YASUYO;NAOE MASAHIKO |
分类号 |
C23C14/34;G11B5/85;G11B5/851 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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