| 摘要 |
PURPOSE:To make the film thickness distribution of a deposited film uniform by placing an insulator between a substrate and bias electrode and adjusting the distribution of dielectric losses. CONSTITUTION:A quartz plate or the like 41 which is the same material as the material of a target 5 and the high dielectric loss insulator 42 consisting of an annular plate made of a polyimide resin or alumina are inserted between the rear of the substrate 4 and the front of the bias electrode 3. The thickness of such insulator 42 is selected between about 0.2-0.5mm to adjust the distribution of an etching speed. The film thickness distribution of the thin film to be deposited on the surface of the substrate 4 is improved by such bias sputtering device. Since the surface of the insulator 42 to be exposed to plasma is covered by the same material as the material of the target 5, the contamination of the deposited film by an etching material is prevented.
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