| 摘要 |
PURPOSE:To contrive the improvement in an insulating withstand voltage at shoulder parts of a wiring pattern and to prevent a short accident by arranging a wiring pattern in openings formed on an interlaminar insulating film and protecting the shoulder parts of the wiring pattern with each adjacent interlaminar insulating film. CONSTITUTION:On a surface of a semiconductor substrate 1, an interlamianar insulating film 3 which is sufficiently thicker than a predetermined thickness of a wiring pattern, and the parts for forming a wiring pattern of this interlaminar insulating film 3 are removed selectively by etching to form openings 4. On these interlaminar insulating film 3 and openings 4, a metallic film 6 which is slightly thicker than the predetermined thickness of wiring pattern is deposited. A resist film 7 is spread in a manner its outer surface 7a becomes even right above the interlaminar insulating film 3 and openings 4. Then, the resist film 7 and the metallic film 6 are removed by etching. To laminate an upper wiring pattern 9 on the metallic film 6 as a lower wiring pattern, an insulating film 10 is laid between them. This insulating film 10 is made even and also the evenness of the wiring pattern 9 is ensured.
|
