| 摘要 |
PURPOSE:To improve the integration of a semiconductor by raising the dielectric breakdown voltage without making oxide films thicker to prevent the capacity per unit area from decreasing by a method wherein the first and the second dielectric films are respectively oxidation-formed of two polycrystalline silicon layers with one in steam atmosphere while the other in oxygen atmosphere. CONSTITUTION:A capacity element is composed of a capacity electrode comprising the first, the second and the third lamination-arranged polycryustalline silicon layers 3, 5, 7 as well as the first and the second dielectric films 4, 6 oxidation-formed of the first and the second polycrystalline silicon layers 3, 5 respectively arranged between said polycrystalline silicon layers 3, 5, 7. Then, one of the first and the second dielectric films 4, 6 is oxidation-formed in steam atmosphere while the other is oxidation-formed in oxygen atmosphere. For example, an oxide film 4 oxidation-formed of the first polycrystalline silicon layer 3 in steam atmosphere is used as the first dielectric film between the first and the second polycrystalline layers 3, 5 while another oxide film 6 oxidation-formed of the second polycrystalline silicon layer 5 in oxygen atmosphere is used as the second dielectric film between the second and the third polycrystalline layers 5, 7. |
