| 摘要 |
PURPOSE:To enable the holding process to be performed without etching an Al electrode by a method wherein hydrazine is used for an etching as a means to make a hole for directly bonding a glass rod on a cantilever type semiconductor strain gauge. CONSTITUTION:In case of making a contact hole 16, an oxide film 13 on a holding part 11 is simultaneously removed because hydrazine etching can not be processed even if there is a bit of residual oxide film 13. Besides, most of the oxide film on the holding part 11 shall be removed before Al evaporation since fluoric acid used for removing the oxide film 13 simultaneously etches an Al interconnection 18 (electrode part). Finally, the Al interconnection 18 is formed by Al evaporation 17, interconnection patterning and etching process.
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