| 摘要 |
PURPOSE:To obtain a semiconductor light emitting element capable of making direct control of the position of P-N junction, concentration of carriers and the profile thereof by a method wherein the respective composing atoms of a compound semiconductor are replaced selectively with amphoteric impurities making one or several atom layers as a unit. CONSTITUTION:Amphoteric impurities are substituted for to be introduced in lamellar types into compound semiconductor crystals. For example, at the case of an Si doped GaAs semiconductor light emitting element, the element is made to have structure wherein a part of the Ga layers or the As layers is replaced with an Si atom layer by one layer unit. When the Ga atom layer is indicated by A, the As atom layer is by B, and the Si atom layer is indicated by C, the crystals are grown being laminated in order as B-A-B-A-B on an N-type GaAs substrate 21, and the A is replaced with the C sporadically as B-A-B-C-B-A-B-A-... to form an N-type GaAs semiconductor. Moreover, from some plate next time, the B is replaced with the C as A-B-A-C-A-B-A- B-... to form a P-type GaAs semiconductor. As the crystal growth method at the case like this, the molecular beam epitaxial growth method or the atom layer epitaxial growth method wherein growth can be controlled by one atom layer unit is used. |
