| 摘要 |
PURPOSE:To form a contact electrode of low resistance without a heat treatment performed, by forming an n layer on a GaInAs layer by ion implantation and then putting metal on it. CONSTITUTION:By putting a metal film on an n-GaInAs layer formed so that its carrier concentration near the surface of a GaInAs semiconductor layer being in contact with a contact electrode becomes 2X10<18>cm<-3> or more, contact resistivity of 5.0X10<-7>OMEGA.cm<2> and contact resistance of 0.04OMEGA.mm are obtained. This result is equivalent to the conventional procedure in which heat treatment at 300 deg.C is preformed, easily realizing low-resistance contact without a heat treatment process performed.
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