| 摘要 |
PURPOSE:To enable an output to be increased by a method wherein an input power is supplied from both ends of fingers of a gate electrode using two bonding pads for the gate electrode to diminish the attenuation of input power due to resistance and parasitic inductance by the fingers etc. of gate electrode. CONSTITUTION:Fingers 4 of a drain electrode connected to a bonding pad 1 for the drain electrode and fingers 5 of a source electrode connected to another bonding pad 2 for the source electrode are formed respectively on a drain region and a source region comprising an impurity diffused layer formed on a silicon substrate. Besides, the other fingers 6 of a gate electrode connected to two connection parts 7A, 7B of the gate electrode are formed on a gate oxide film between the source region and the drain region while the connection parts 7A, 7B are respectively connected to the bonding 3A, 3B. In such a constitution, the distance from the bonding pads 3A, 3B for the gate electrode to the fingers 6 of gate electrode can be shortened while the fingers 6 of gate electrode can be lengthened to easily increase the output of a semiconductor device. |
