| 摘要 |
PURPOSE:To enable a film to grow on a wafer with a uniform thickness and without any variance in thickness distribution over the wafer, by controlling the temperature distribution in the wafer. CONSTITUTION:Each of heaters 9 is driven by a temperature control command given by a temperature controller 10 and the center of a semiconductor wafer 3 is heated by the heater. During the heating, the periphery of the wafer 3 is not heated by the heater 9 because it is contacted with the peripheral edge 4 of a screen 4a. Consequently, the semiconductor wafer 3 has a higher tempera ture in the central region than in the peripheral region thereof by the driving of the heater 9. The peripheral region of the wafer 3, having a relatively low temperature than the central region thereof, delays reacting with a reaction gas consumes less gas. Thus, the gas is allowed to flow to the center of the wafer. As a result, a higher concentration of the gas is held in the central region than in the peripheral region of the wafer 3 and the central region reacts with gas having such higher concentration.
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