| 摘要 |
PURPOSE:To easily form a reliable short-circuit between source regions and a base region adjoining those source regions without depending on a fact that the number of cells is more or less and the dimension of source electrodes is larger or smaller by a method wherein, when the source regions are formed by performing ion implantation, a partial region in the implanted region is covered with a mask consisting of a photo resist. CONSTITUTION:A drain electrode is provided on the lower surface of an Si semiconductor substrate 1, a plurality of source electrodes 19 and a plurality of gate electrodes 11 are each provided on the upper surface of the semiconductor substrate 1 through an insulating film 8, first conductivity type source regions 13 are formed in a second conductivity type channel forming region 12 surrounded with a first conductivity type carrier propagating region 2 and a base region 7 of an impurity concentration high than that of that channel- forming region 12, and the source regions 13 and the base region 7 adjacent to the source regions 13 are short-circuited by the source electrodes 19. In case such a transistor is manufactured, the base region 7 and a second conductivity type region to be used as the channel forming region 12 are formed in a first conductivity type layer to be used as the carrier propagating region 2, then when the source regions 13 are formed by performing ion implantation in part of the surface of the second conductivity type region, a partial region in the implanted region is so contrived as to be covered with a mask 22 consisting of a photoresist. |
