发明名称 FIELD EFFECT TRANSISTOR
摘要 PURPOSE:To raise the withstand voltage between a gate and a drain by means of forming electrode into the shape of arcs. CONSTITUTION:A drain electrode 2 is formed opposing to a gate electrode 1 taking the shape of an arc at a distance of L. The shape of side 2A of the drain electrode 2 is taken to be formed into the concentric circle of an arc 1A formed by the side of gate electrode 1 making its radius rd smaller than the radius rj of arc 1A. In such a constitution, the withstand voltage between the gate and the drain when the radius rj is limited can be raised compared with the case when the radius rj is unlimited.
申请公布号 JPS62188276(A) 申请公布日期 1987.08.17
申请号 JP19860030083 申请日期 1986.02.13
申请人 NEC CORP 发明人 MORIKAWA HIROSHI
分类号 H01L29/78 主分类号 H01L29/78
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