| 摘要 |
PURPOSE:To improve the definition of a resist pattern by rinsing the developed resist pattern then swelling the resist pattern and rinsing again the swollen resist pattern. CONSTITUTION:The developed resist pattern is powerfully rinsed by which the contact part between the resist patterns generated by swelling is separated in the stage of development. A soln. mixture composed of ethyl 'Cellosolve(R)' and isopropyl alcohol or the like is used as the powerful rinsing liquid. The waving of the resist pattern generated by the powerful rinsing is eliminated by swelling the resist pattern with a swelling liquid. A soln. mixture composed of a methyl ketone and isopropyl alcohol at 3:2 mixing ratio or the like is used for the swelling liquid. The steeve resist pattern is obtd. by gently rinsing the swollen resist pattern. The ultrafine resist pattern in a submicron region is thus formed by X-ray exposure. |
