| 摘要 |
PURPOSE:To prevent the damage of a photoresist film by strong UV irradiation by weakening the irradiation intensity on the photoresist surface in the initial period of the irradiation time then gradually or stepwise increasing the irradiation intensity. CONSTITUTION:The photoresist is treated at the irradiation intensity of the extent at which the photoresist is not damaged in the starting stage of the treatment. Since the irradiation intensity of UV rays is first controlled low, the release of various gases progresses gently and therefore, the gases are gently released through the photoresist film. Since the irradiation intensity is increased after the substantial end of the generation of the gases, the adequate resist treatment without damaging the photoresist film is attained while more than necessary increase of the irradiation treatment time over the entire part is averted.
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