| 摘要 |
PURPOSE:To realize the noise reduction of an element by providing a channel stopper to restrain the increase of a dark current on the boundary surface of a hetero-junction or a homo-junction. CONSTITUTION:A first one-conduction type carrier multiplying layer 4A and a second one-conduction type carrier multiplying layer 4B of high impurity density are grown in order on an one-conduction type light-absorbing layer 3. The second multiplying layer 4B and the first multiplying layer 4a are subjected to an etching covering a light-receiving region, and a mesa is formed in the light-receiving region where a part of the layer 4A is left in the direction of the thickness. Sulfur, selection, etc. are doped with high density around the mesa, and an one-conduction type channel stopping region 7 including a junction boundary surface is formed. Covering the mesa, an one-conduction type guard ring layer 5 is grown. A inverse-conduction-type region 7 is formed so as to reach the second multiplying layer 4B from the surface of the guard ring layer 5 in the photo receiving region. After that, electrodes are formed on the respective back surfaces of the region 6 and the substrate 1.
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