发明名称 |
MULTI-LAYERED THIN FILM FORMING DEVICE AND FORMATION OF MULTI-LAYERED THIN FILM USING SAID DEVICE |
摘要 |
PURPOSE:To form the multi-layered thin film having no disturbance in crystallinity on a low melting substrate by subjecting a substrate holder to force cooling, etc., so that the cooling of the substrate and the displacement of plural magnetron sputtering electrodes are made possible. CONSTITUTION:This multi-layered thin film forming device has a vacuum vessel 5,the plural magnetron sputtering electrodes 3A disposed therein and the substrate holder 6. An operation to form a thin crystal film on the substrate 1 by selective magnetron sputtering of a target 2 on the above-mentioned electrodes 3A is repeated. The holder 6 is forcibly cooled. The electrodes 3A are rotated and displaced around a revolving shaft 8A. A surface for supporting the target 2 is, therefore, selectively positioned on the central axis of the substrate 1 of the holder 6.
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申请公布号 |
JPS62185874(A) |
申请公布日期 |
1987.08.14 |
申请号 |
JP19860027370 |
申请日期 |
1986.02.10 |
申请人 |
NIPPON TELEGR & TELEPH CORP <NTT> |
发明人 |
KATO YUJIRO;MICHIGAMI OSAMU;TANABE KEIICHI;ASANO HIDEFUMI |
分类号 |
C30B23/08;C23C14/35;C23C14/36;H01B13/00;H01L21/203;H01L39/06 |
主分类号 |
C30B23/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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