发明名称 MULTI-LAYERED THIN FILM FORMING DEVICE AND FORMATION OF MULTI-LAYERED THIN FILM USING SAID DEVICE
摘要 PURPOSE:To form the multi-layered thin film having no disturbance in crystallinity on a low melting substrate by subjecting a substrate holder to force cooling, etc., so that the cooling of the substrate and the displacement of plural magnetron sputtering electrodes are made possible. CONSTITUTION:This multi-layered thin film forming device has a vacuum vessel 5,the plural magnetron sputtering electrodes 3A disposed therein and the substrate holder 6. An operation to form a thin crystal film on the substrate 1 by selective magnetron sputtering of a target 2 on the above-mentioned electrodes 3A is repeated. The holder 6 is forcibly cooled. The electrodes 3A are rotated and displaced around a revolving shaft 8A. A surface for supporting the target 2 is, therefore, selectively positioned on the central axis of the substrate 1 of the holder 6.
申请公布号 JPS62185874(A) 申请公布日期 1987.08.14
申请号 JP19860027370 申请日期 1986.02.10
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 KATO YUJIRO;MICHIGAMI OSAMU;TANABE KEIICHI;ASANO HIDEFUMI
分类号 C30B23/08;C23C14/35;C23C14/36;H01B13/00;H01L21/203;H01L39/06 主分类号 C30B23/08
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