| 摘要 |
PURPOSE:To manufacture pattern simply and to prevent the increase in temperature due to concentration of losses, by forming shorting parts in strip shaped concentric circle patterns with a specified interval being provided. CONSTITUTION:N3 layers are formed in strip shaped concentric circle patterns with respect to a central point O of a silicon wafer with a specified interval being provided. Since the patterns are formed in the concentric circle patterns, the patterns are readily formed. The increase in temperature due to the concentration of losses caused by unevenness is manufacturing is not yielded. The patterns can be arranged in parallel or in radial pattern in a constitution, in which the central part of the Si wafer is made to be the center of the patterns. |
