| 发明名称 |
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| 摘要 |
PURPOSE:A mesastripe region is formed on a substrate with variation and make the application to an optical integrated circuit possible by a method wherein when a tapered waveguide path is made by liquid phase growth the width of the path of the direction perpendicular to both the direction of light propagation and the direction perpendicular to the substrate is charged gradually. CONSTITUTION:An optical waveguide path layer is formed in an optical integrated circuit composed of III-V family compound semiconductor. The thickness of a part of the waveguide path is gradually changed along the direction of the light propagation and a tapered waveguide path is made by liquid phase growth. When such tapered waveguide path is made, a mesastripe 13 is formed as an output waveguide layer on a crystal growing wafer 10 and a tapered active layer 14 is grow on the mesastripe 13 and a burying clad layer 15 is made grow thickly on the active layer 14, so that the layers 14 and 15 have buried composition. InP or GaAs is used for this semiconductor substrate and the mesastripe region is formed on the substrate with variation and the substrate with such mesastripe can be applied to an optical integrated circuit. |
| 申请公布号 |
JPS6237905(B2) |
申请公布日期 |
1987.08.14 |
| 申请号 |
JP19810068159 |
申请日期 |
1981.05.08 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
FURUYAMA HIDETO;UEMATSU YUTAKA |
| 分类号 |
G02B6/13;H01L21/208;H01L27/15;H01S5/00;H01S5/026;H01S5/10;H01S5/227 |
主分类号 |
G02B6/13 |
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